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| RFP2N08L, RFP2N10L Data Sheet July 1999 File Number 2872.2 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA0924. Features * 2A, 80V and 100V * rDS(ON) = 1.050 * Design Optimized for 5V Gate Drives * Can be Driven Directly from QMOS, NMOS, TTL Circuits * Compatible with Automotive Drive Requirements * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance Ordering Information PART NUMBER RFP2N08L RFP2N10L PACKAGE TO-220AB TO-220AB BRAND RFP2N08L RFP2N10L * Majority Carrier Device * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" NOTE: When ordering, include the entire part number. Symbol D G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 6-248 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 RFP2N08L, RFP2N10L Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP2N08L Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 1M) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Derate above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 80 80 2 5 10 25 0.2 -55 to 150 300 260 RFP2N10L 100 100 2 5 10 25 0.2 -55 to 150 300 260 UNITS V V A A V W W/oC oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS VGS = 0V, ID = 250A 80 100 VGS(TH) IGSS IDSS VGS = VDS, ID = 250A VGS = 10V, VDS = 0V VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC 1.0 VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 9) 10 15 25 20 2.0 100 1.0 25 2.1 1.050 25 45 45 25 200 80 35 5 V V V nA A A V ns ns ns ns pF pF pF oC/W MIN TYP MAX UNITS Drain to Source Breakdown Voltage RFP2N08L RFP2N10L Gate to Threshold Voltage Gate to Source Leakage Zero to Gate Voltage Drain Current Drain to Source On Voltage (Note 2) Drain to Source On Resistance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case VDS(ON) rDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC ID = 2A, VGS = 5V ID = 2A, VGS = 5V, (Figures 6, 7) ID = 2A, VDD = 50V, RG = 6.25, RL = 25, VGS = 5V (Figures 10, 11, 12) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time NOTES: 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. SYMBOL VSD trr ISD = 2A ISD = 2A, dISD/dt = 50A/s TEST CONDITIONS MIN TYP 100 MAX 1.4 UNITS V ns 6-249 RFP2N08L, RFP2N10L Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 ID, DRAIN CURRENT (A) 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 150 Unless Otherwise Specified 2.5 2.0 1.5 0.6 0.4 1.0 0.2 0 0.5 0 25 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 TJ = MAX RATED, TC = 25oC ID, DRAIN CURRENT (A) 8 7 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 25oC VGS = 10V ID, DRAIN CURRENT (A) 6 5 4 3 2 VGS = 3.0V 1 VGS = 2.0V VGS = 4.0V VGS = 5.0V 1 OPERATION IN THIS AREA LIMITED BY rDS(ON) 0.1 RFP2N08L 0.01 1 RFP2N10L 102 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 103 0 0 1 3 5 7 2 4 6 8 VDS, DRAIN TO SOURCE VOLTAGE (V) 9 10 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS IDS(ON), DRAIN TO SOURCE CURRENT (A) 8 7 6 5 4 3 2 1 0 1 TC = 125V TC = -40V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS = 15V 2 TC = 125V TC = 25V rDS(ON), DRAIN TO SOURCE TC = 125V ON RESISTANCE () 1.5 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 5V TC = -40V 1 TC = 25V TC = -40V 0.5 0 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 6 0 1 2 5 6 7 3 4 ID, DRAIN CURRENT (A) 8 9 10 FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 6-250 RFP2N08L, RFP2N10L Typical Performance Curves ID = 2A, VGS = 5V PULSE DURATION = 80ms DUTY CYCLE = 0.5% MAX NORMALIZED GATE TO THRESHOLD VOLTAGE Unless Otherwise Specified (Continued) 2.0 NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2.0 ID = 250A VDS = VGS 1.5 1.5 1.0 1.0 0.5 0.5 -50 0 50 100 150 200 0 -50 0 50 100 150 200 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 240 200 C, CAPACITANCE (pF) 160 120 CISS 80 COSS 40 0 CRSS 0 10 20 30 40 50 60 70 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 0V, f = 0.1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD FIGURE 8. NORMALIZED GATE TO THRESHOLD vs JUNCTION TEMPERATURE 100 10 VGS , GATE TO SOURCE VOLTAGE (V) RL = 50, VGS = 5V IG(REF) = 0.094mA PLATEAU VOLTAGES IN DESCENDING ORDER: VDD = BVDSS VDD = 0.75 BVDSS VDD = 0.50 BVDSS VDD = 0.25 BVDSS VDS , DRAIN TO SOURCE VOLTAGE (V) 75 8 6 50 25 GATE SOURCE VOLTAGE DRAIN SOURCE VOLTAGE 4 2 0 I G ( REF ) 20 -----------------------I G ( ACT ) t, TIME (ms) I G ( REF ) 80 -----------------------I G ( ACT ) 0 NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuit and Waveforms tON td(ON) RL tr VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 6-251 RFP2N08L, RFP2N10L All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 6-252 |
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